vco for c/p, cb pll features low series resistance : 0.6 (max.) high capacitance ratio : 1.7(min.) 2.2(max.) maximum rating (ta=25 ) 1 2 to-92m dim millimeters a b c d e f g h j k 1. anode 2. cathode 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o0.75 o b + _ + _ 12 2002. 6. 25 1/2 semiconductor technical data kdv251m/s variable capacitance diode silicon epitaxial planar diode revision no : 4 electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 12 v junction temperature t j 150 storage temperature range t stg -55 150 grade type name marking lot no. q3 classification of capacitance ratio grade grade capacitance ratio (c 1.6v /c 5v ) none 1.70 2.20 a 1.70 1.82 b 1.80 1.92 c 1.90 2.020 d 2.00 2.12 e 2.10 2.20 characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =10 a 12 - - v reverse current i r v r =9v - - 200 na capacitance c 1.6v v r =1.6v, f=1mhz 23 - 38 pf capacitance c 5v v r =5v, f=1mhz 11 - 19 pf capacitance ratio c 1.6v /c 5v 1.7 - 2.2 series resistance r s v r =1v, f=50mhz - - 0.6 dim millimeters 1. nc 2. anode 3. cathode sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p 7 2 1 3 + _
kdv251m/s 2/2 2002. 6. 25 revision no : 4 c - v r reverse voltage v (v) 0 100 5 capacitance c (pf) 30 r 10 50 f=1mhz ta=25 c r figure of merit q reverse voltage v (v) r q - v 100 0 246810 300 500 1k 2k f=50mhz ta=25 c 246810
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